FDB2532
Manufacturer:
On Semiconductor
Mfr.Part #:
FDB2532
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 310 W 150 V Continuous Drain Current (ID):79 A 107 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 150 V |
| Length | 10.67 mm |
| Width | 11.33 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 16 MΩ |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 150 V |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 79 A |
| Current Rating | 79 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 310 W |
| Power Dissipation | 310 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 5.87 nF |
| Continuous Drain Current (ID) | 79 A |
| Rds On Max | 16 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Rise Time | 30 ns |
| Dual Supply Voltage | 150 V |
| Gate Charge | 107 nC |
| Drain to Source Resistance | 14 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 150 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
Stock: 1217
Distributors
pcbx
pcbxUnit Price$2.17152
Ext.Price$2.17152
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.17152 | $2.17152 |
| 10 | $1.71499 | $17.14990 |
| 25 | $1.60816 | $40.20400 |
| 50 | $1.50798 | $75.39900 |
| 100 | $1.41406 | $141.40600 |
| 300 | $1.37021 | $411.06300 |
| 500 | $1.32772 | $663.86000 |
| 1000 | $1.28655 | $1286.55000 |
| 3000 | $1.24666 | $3739.98000 |
| 5000 | $1.20801 | $6040.05000 |